High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
Identifieur interne : 000249 ( Russie/Analysis ); précédent : 000248; suivant : 000250High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
Auteurs : RBID : Pascal:07-0240774Descripteurs français
- Pascal (Inist)
- Haute température, Conductivité électrique, Pression vapeur, Dopage, Conductivité type n, Energie activation, Formation défaut, Lacune, Défaut, Impureté, Addition indium, Ionisation impureté, Zinc séléniure, Cadmium séléniure, Semiconducteur II-VI, Composé minéral, Métal transition composé, ZnSe, CdSe, 7220F.
- Wicri :
- concept : Dopage, Composé minéral.
English descriptors
- KwdEn :
- Activation energy, Cadmium selenides, Defect formation, Defects, Doping, Electrical conductivity, High temperature, II-VI semiconductors, Impurities, Impurity ionization, Indium additions, Inorganic compounds, N type conductivity, Transition element compounds, Vacancies, Vapor pressure, Zinc selenides.
Abstract
High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe: In and of CdSe: In are compared. There are differencies in In-doping mechanisms of II-VI compounds. When HTEC isotherms and isobars of ZnSe: In and of CdSe: In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (pSe2). ZnSe: In isotherms in the last case are characterized by the conductivity type conversion but no such drastic change of HTEC type is observed on CdSe: In isotherms. Under the conditions of pSe2, the activation energy of HTEC isobars for ZnSe: In is ΔE ≃ 1.3 -1.6 eV and for CdSe: In is ΔE ≃ 1.2 eV. The onefold ionized substitutional In at Zn place is proposed to be compensated by native defects in ZnS: In and in CdSe: In under high pSe2. This native defect may be onefold ionized zinc vacancy for ZnSe: In and twofold ionized cadmium vacancy for CdSe: In. Association of defects occur at lower temperatures.
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Shinkarenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Volobujeva, O" uniqKey="Volobujeva O">O. Volobujeva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="T Rn, L" uniqKey="T Rn L">L. T Rn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Nirk, T" uniqKey="Nirk T">T. Nirk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Opik, A" uniqKey="Opik A">A. Opik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Nisumaa, R" uniqKey="Nisumaa R">R. Nisumaa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Kallavus, U" uniqKey="Kallavus U">U. Kallavus</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Noges, M" uniqKey="Noges M">M. Noges</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Mikli, V" uniqKey="Mikli V">V. Mikli</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Viljus, M" uniqKey="Viljus M">M. Viljus</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Gorokhova, E" uniqKey="Gorokhova E">E. Gorokhova</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>S. I. Vavilov State Optical Institute, Babushkina street 36-1</s1><s2>193171 St. Petersburg</s2><s3>RUS</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>193171 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Anan Eva, G" uniqKey="Anan Eva G">G. Anan Eva</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>S. I. Vavilov State Optical Institute, Babushkina street 36-1</s1><s2>193171 St. Petersburg</s2><s3>RUS</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>193171 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Grebennik, A" uniqKey="Grebennik A">A. Grebennik</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9</s1><s2>125047 Moscow</s2><s3>RUS</s3><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Vishnjakov, A" uniqKey="Vishnjakov A">A. Vishnjakov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9</s1><s2>125047 Moscow</s2><s3>RUS</s3><sZ>14 aut.</sZ><sZ>15 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0240774</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0240774 INIST</idno><idno type="RBID">Pascal:07-0240774</idno><idno type="wicri:Area/Main/Corpus">007E79</idno><idno type="wicri:Area/Main/Repository">007860</idno><idno type="wicri:Area/Russie/Extraction">000249</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Cadmium selenides</term><term>Defect formation</term><term>Defects</term><term>Doping</term><term>Electrical conductivity</term><term>High temperature</term><term>II-VI semiconductors</term><term>Impurities</term><term>Impurity ionization</term><term>Indium additions</term><term>Inorganic compounds</term><term>N type conductivity</term><term>Transition element compounds</term><term>Vacancies</term><term>Vapor pressure</term><term>Zinc selenides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Haute température</term><term>Conductivité électrique</term><term>Pression vapeur</term><term>Dopage</term><term>Conductivité type n</term><term>Energie activation</term><term>Formation défaut</term><term>Lacune</term><term>Défaut</term><term>Impureté</term><term>Addition indium</term><term>Ionisation impureté</term><term>Zinc séléniure</term><term>Cadmium séléniure</term><term>Semiconducteur II-VI</term><term>Composé minéral</term><term>Métal transition composé</term><term>ZnSe</term><term>CdSe</term><term>7220F</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe: In and of CdSe: In are compared. There are differencies in In-doping mechanisms of II-VI compounds. When HTEC isotherms and isobars of ZnSe: In and of CdSe: In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (p<sub>Se2</sub>). ZnSe: In isotherms in the last case are characterized by the conductivity type conversion but no such drastic change of HTEC type is observed on CdSe: In isotherms. Under the conditions of p<sub>Se2</sub>, the activation energy of HTEC isobars for ZnSe: In is ΔE ≃ 1.3 -1.6 eV and for CdSe: In is ΔE ≃ 1.2 eV. The onefold ionized substitutional In at Zn place is proposed to be compensated by native defects in ZnS: In and in CdSe: In under high p<sub>Se2</sub>. This native defect may be onefold ionized zinc vacancy for ZnSe: In and twofold ionized cadmium vacancy for CdSe: In. Association of defects occur at lower temperatures.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>244</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Wide band gap II-VI semiconductors: growth, characterization and applications, Warsaw, 4-8 September 2006</s1></fA09><fA11 i1="01" i2="1"><s1>LOTT (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHINKARENKO (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>VOLOBUJEVA (O.)</s1></fA11><fA11 i1="04" i2="1"><s1>TÜRN (L.)</s1></fA11><fA11 i1="05" i2="1"><s1>NIRK (T.)</s1></fA11><fA11 i1="06" i2="1"><s1>OPIK (A.)</s1></fA11><fA11 i1="07" i2="1"><s1>NISUMAA (R.)</s1></fA11><fA11 i1="08" i2="1"><s1>KALLAVUS (U.)</s1></fA11><fA11 i1="09" i2="1"><s1>NOGES (M.)</s1></fA11><fA11 i1="10" i2="1"><s1>MIKLI (V.)</s1></fA11><fA11 i1="11" i2="1"><s1>VILJUS (M.)</s1></fA11><fA11 i1="12" i2="1"><s1>GOROKHOVA (E.)</s1></fA11><fA11 i1="13" i2="1"><s1>ANAN'EVA (G.)</s1></fA11><fA11 i1="14" i2="1"><s1>GREBENNIK (A.)</s1></fA11><fA11 i1="15" i2="1"><s1>VISHNJAKOV (A.)</s1></fA11><fA12 i1="01" i2="1"><s1>MYCIELSKI (A.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GODLEWSKI (M.)</s1></fA12><fA12 i1="03" i2="1"><s1>ZAKRZEWSKI (A. J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="03"><s1>S. I. Vavilov State Optical Institute, Babushkina street 36-1</s1><s2>193171 St. Petersburg</s2><s3>RUS</s3><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9</s1><s2>125047 Moscow</s2><s3>RUS</s3><sZ>14 aut.</sZ><sZ>15 aut.</sZ></fA14><fA15 i1="01"><s1>Institute of Physics, Polish Academy of Sciences</s1><s2>Warsaw</s2><s3>POL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>1623-1626</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183B</s2><s5>354000159942480320</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0240774</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe: In and of CdSe: In are compared. There are differencies in In-doping mechanisms of II-VI compounds. When HTEC isotherms and isobars of ZnSe: In and of CdSe: In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (p<sub>Se2</sub>). ZnSe: In isotherms in the last case are characterized by the conductivity type conversion but no such drastic change of HTEC type is observed on CdSe: In isotherms. Under the conditions of p<sub>Se2</sub>, the activation energy of HTEC isobars for ZnSe: In is ΔE ≃ 1.3 -1.6 eV and for CdSe: In is ΔE ≃ 1.2 eV. The onefold ionized substitutional In at Zn place is proposed to be compensated by native defects in ZnS: In and in CdSe: In under high p<sub>Se2</sub>. This native defect may be onefold ionized zinc vacancy for ZnSe: In and twofold ionized cadmium vacancy for CdSe: In. Association of defects occur at lower temperatures.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B20F</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Haute température</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>High temperature</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Alta temperatura</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Pression vapeur</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Vapor pressure</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dopage</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Doping</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Conductivité type n</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>N type conductivity</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Conductividad tipo n</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Energie activation</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Activation energy</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Formation défaut</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Defect formation</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Formación defecto</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Lacune</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Vacancies</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Défaut</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Defects</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Impureté</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Impurities</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Addition indium</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium additions</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Ionisation impureté</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Impurity ionization</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Ionización impureza</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc séléniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc selenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Cadmium séléniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Cadmium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0><s5>48</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>II-VI semiconductors</s0><s5>48</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé minéral</s0><s5>49</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>49</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>50</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>50</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>ZnSe</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>CdSe</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>7220F</s0><s4>INC</s4><s5>60</s5></fC03><fN21><s1>162</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>2006 E-MRS Fall Meeting, Symposium F</s1><s3>Warsaw POL</s3><s4>2006-09-04</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:07-0240774
|texte= High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
}}
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